Longeaud, Two-Dimensional Simulations of Interdigitated Back Contact Silicon Heterojunctions Solar, in Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. 9, 4308 (2019).Ītlas User’s Manual: Device Simulation from Silvaco International, Version 1.8.20į. It is one of the fundamental laws of electromagnetism. The total number of electric field lines passing a given area in a unit of time is defined as the electric flux. Optimization of ZnO thickness for high efficiency of n-ZnO/p-Si heterojunction solar cells by 2D numerical simulation, in Proceeding of the 2020 IEEE 6th International Conference on Optimization and Applications (ICOA) Beni Mellal, Morocco. Gauss’s Law The mathematical relation between electric flux and the enclosed charge is known as Gauss law for the electric field. Furthermore, it was revealed that reducing the thickness of the GaAs absorber layer to 2 µm allowed for a significant conversion efficiency of 16.19%, with an optimal GaAs acceptor concentration of 4 × 10 18 cm − 3.į. The n-ZnO/ p-GaAs cell showed a predicted best conversion efficiency of 21.21%. Additionally, an optimal ZnO thickness of 200 nm was shown. A high sensitivity of the conversion efficiency by varying the ZnO donor concentration was observed, while the presence of an optimal GaAs acceptor density was revealed. An optimal p-GaAs thickness of 100 µm was found, from which no significant change in the conversion efficiency was noted. A two-dimensional numerical simulation was carried out using Atlas Silvaco software. For that, the effects of thickness and charge carrier concentration of both n-ZnO and p-GaAs absorber on the photovoltaic performance were investigated under standard illumination conditions (AM1.5, 100 mW/cm 2). In this work, the n-ZnO/ p-GaAs heterojunction solar cell was studied to estimate the best photovoltaic parameters of the structure. The n-ZnO/ p-GaAs heterojunction is a promising structure to reach good conversion efficiency owing to the important optical and electrical properties of both zinc oxide (ZnO) and gallium arsenide (GaAs) semiconductors. In physics and engineering, heat flux or thermal flux, sometimes also referred to as heat flux density, heat-flow density or heat flow rate intensity, is a flow of energy per unit area per unit time.Its SI units are watts per square metre (W/m 2).It has both a direction and a magnitude, and so it is a vector quantity.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |